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ETH Honggerberg Campus 2040 (English)We employ highest-purity molecular beam epitaxial (MBE) growth to gain insights into the physics of correlated electrons in systems of. We measure electron transport through point contacts in an electron gas in AlGaAs/GaAs heterostructures and graphene for a range of temperatures. The growth of high quality devices will be continued in close cooperation with the Advanced Semiconductor Quantum Materials group of Werner Wegscheider at ETH.
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